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PD - 91810
SMPS MOSFET
IRFIB7N50A
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001)
l
VDSS
500V
Rds(on) max
0.52
ID
6.6A
TO-220 FULLPAK
GDS
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
6.6 4.2 44 60 0.48 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Applicable Off Line SMPS Topologies:
l l l
Two Transistor Forward Half & Full Bridge Convertors Power Factor Correction Boost
Notes through are on page 8
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1
6/15/99
IRFIB7N50A
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.61 --- V/C Reference to 25C, ID = 1mA --- --- 0.52 VGS = 10V, ID = 4.0A 2.0 --- 4.0 V VDS = VGS, ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, T J = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 6.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 14 35 32 28 1423 208 8.1 2000 55 97 Max. Units Conditions --- S VDS = 50V, ID = 6.6A 52 ID = 11A 13 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 11A ns --- RG = 9.1 --- R D = 22,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
275 11 6.0
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
2.1 65
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 6.6 showing the A G integral reverse 44 --- --- S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 11A, VGS = 0V --- 510 770 ns TJ = 25C, IF = 11A --- 3.4 5.1 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFIB7N50A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
4.5V 20s PULSE WIDTH
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
0.1 0.1
TJ = 25 C
1 10 100
4.5V
1 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
ID = 11A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
10
2.0
TJ = 150 C
1.5
TJ = 25 C
1
1.0
0.5
0.1 4.0
V DS = 100V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFIB7N50A
2400
2000
VGS , Gate-to-Source Voltage (V)
V GS C is s C rss C oss
= = = =
0V, f = 1M Hz C g s + C g d , Cd s S H O R T E D C gd C ds + C gd
20
ID = 11A 6.6A VDS = 400V VDS = 250V VDS = 100V
C , C a pa c itan c e (p F )
C is s
1600
16
C oss
1200
12
8
800
C rs s
400
4
0 1 10 100 1000
A
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
V D S , D rain-to-S ource V oltage (V )
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10
I D , Drain Current (A)
100 10us 10 100us 1ms 1 10ms
TJ = 150 C
1
TJ = 25 C
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFIB7N50A
7.0
VDS VGS RG
RD
6.0
D.U.T.
+
I D , Drain Current (A)
5.0
-VDD
4.0
10V
Pulse Width 1 s Duty Factor 0.1 %
3.0
2.0 1.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10
0.1 0.02 0.01
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFIB7N50A
1 5V
600
EAS , Single Pulse Avalanche Energy (mJ)
TOP
500
VDS
L
D R IV E R
BOTTOM
ID 4.9A 7.0A 11A
400
RG
20V tp
D .U .T
IA S
+ V - DD
A
300
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
200
100
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V D S a v , Avalanche V oltage (V)
660
640
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
620
50K 12V .2F .3F
600
D.U.T. VGS
3mA
+ V - DS
580 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
A
I av , A valanche C urrent (A )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFIB7N50A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFIB7N50A
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
10 .6 0 (.41 7) 10 .4 0 (.40 9) o 3.40 ( .1 33 ) 3.10 ( .1 23 ) -A 3.70 ( .145 ) 3.20 ( .126 ) 4.8 0 (.1 89) 4.6 0 (.1 81) 2 .80 ( .110) 2 .60 ( .102) LE A D A S S IG N M E N T S 1 - GA TE 2 - D R A IN 3 - SO UR CE
7.10 ( .280 ) 6.70 ( .263 )
1 6.00 (.630) 1 5.80 (.622)
1.1 5 (.04 5) M IN . 1 2 3
NOT ES : 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14 .5M , 19 82 2 C O N T R O LLIN G D IM E N S IO N : IN C H .
3.3 0 (.130 ) 3.1 0 (.122 ) -B 1 3.70 (.540) 1 3.50 (.530) C D
A 3X 1.4 0 (.05 5) 1.0 5 (.04 2) 3X 0.9 0 (.035 ) 0.7 0 (.028 ) 0.25 (. 010) 2.54 (.100 ) 2X M AM B 3X 0.4 8 (.019 ) 0.4 4 (.017 )
B
2.85 ( .112 ) 2.65 ( .104 )
M IN IM U M C R E E P A G E D IS T A N C E B E T W E E N A - B - C -D = 4.80 (.1 89)
Part Marking Information
TO-220 Fullpak
E X A M P L E : T H IS IS A N IR F I8 4 0 G W IT H A S S E M B L Y LOT CODE E401
A
IN T E R N A T IO N A L R E C T IF IE R LO GO ASSEMBLY LO T CO DE
PART NUMBER IR F I8 4 0 G
E 401 9245
Notes:
DA TE CO D E (Y YW W ) YY = YE A R W W = W EEK
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 4.5mH
RG = 25, I AS = 11A. (See Figure 12)
ISD 11A, di/dt 140A/s, VDD V(BR)DSS,
TJ 150C
Uses IRFB11N50A data and test conditions t=60s,f=60Hz
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99
8
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